个人简介
郭三栋，副教授，省级无党派人士。2018.5-至今，西安邮电大学电子工程学院从事教学科研工作。2012.7-2018.5，中国矿业大学从事教学科研工作。2007.9-2012.6,中国科学院物理研究所硕博连读. 2003.9-2007.6,西安电子科技大学本科学习。
自2012年从中国科学院物理所博士毕业后独立开展工作以来，专注多功能材料探索（独立思考,设计和计算），申请人以第一/通讯在重要学术期刊上发表文章80余篇。申请人所发表SCI文章被Science、Nature、Nature Reviews Physics、Physical Review Letters等著名期刊引用5000余次 (Google)，其中3篇第一作者文章被引次数超200次,8篇超100次 (Google)，H-index为42 (Google)。此外，还担任Nature Communications、Physical Review Letters、Physical Review B等40余种国内外知名学术期刊的审稿人。近五年，本人在物理学著名期刊Physical Review Letters (共一1篇)、Physical Review B (第一且通讯15篇，其中三篇Letter)、Applied Physics Letters (第一或通讯9篇，其中两篇Editor’s Pick，一篇主编邀请Perspective) 等发表20余篇SCI文章。
项目申请人入选爱思唯尔中国高被引学者（2024-2025）。入选全球前2%科学家“年度科学影响力排行榜”和“学术生涯科学影响力排行榜”（2021-2025），并于2025年进入世界前1.4万名之列。入选英国皇家化学会物理化学类期刊“Top 1%高被引作者排行榜”（2019）。荣获英国物理学会“高被引文章奖”（2021）。荣获中国物理学会“CPB 2025年度最有影响论文”。第一完成人（1/2）获2024年度陕西高等学校科学技术研究优秀成果二等奖。
研究方向以及近五年主要工作：
1．提出了准半谷金属、铁谷金属和谷无能隙半导体电子态的概念。提出隐藏交错磁性（被实验证实），隐藏完全补偿亚铁磁性和隐藏半金属电子态。
2．在XV2Y2O (X=K, Rb, Cs; Y=Se, Te)家族中，提出通过单轴应变区分明显和隐藏交错磁性的策略。在此基础上，预言了一类强健的明显交错磁性家族XCr2Y2O (X=K, Rb, Cs; Y=Se, Te)。
3．提出在PT-反铁磁中实现谷极化的普适性策略。针对正方交错磁体和转角交错磁体，分别提出相应的谷极化实现策略。进一步提出“弱谷层耦合”概念，并阐明可在中心对称铁磁体中通过电场调控实现谷极化。
4．在铁谷材料体系中，提出了一种新的物理效应：压电反常谷霍尔效应。提出全新Janus MA2Z4家族，并通过应变调控铁谷体VSiGeN4，成功实现了多种新奇的谷电子态。
5．将完全补偿亚铁磁体的概念拓展至二维体系，提出“二维填充强制的完全补偿亚铁磁体”概念（合作完成）。提出“电势差反铁磁”电子态，从对称性角度分析，该电子态应归类为完全补偿亚铁磁态。
6．提出一种通过调控自旋序而非改变晶格结构来诱导完全补偿亚铁磁性的新策略，该策略亦可推广应用于交错磁性的诱发。此外，提出通过将总磁矩相等的不同二维材料构建层间反铁磁耦合异质结以实现完全补偿亚铁磁性的方案。
7．提出以外场调控交错磁金属，实现看起来“禁戒”的完全补偿亚铁磁金属；揭示压磁性本质即交错磁到完全补偿亚铁磁的相变，并进一步预言电致磁性。此外，提出通过电场湮灭层间反铁磁耦合双层的能隙来实现完全补偿亚铁磁金属，其中要求单层须为单极磁性半导体。
教学方向
为本科生承担过大学物理，大学物理实验，固体物理，电动力学和数学建模。
发表论文
最近代表作（*为通讯作者）：
1.Guo San-Dong*, Hidden altermagnetism, Frontiers of Physics 21, 025201 (2026). (提出的隐藏交错磁性被实验[arXiv:2512.00972 (2025)]证实)
2.Guo San-Dong*, Valley polarization in two-dimensional zero-net-magnetization magnets, Applied Physics Letters 126, 080502 (2025). (Perspective invited by Editor-in-Chief Maria Antonietta Loi; Editor’s Pick)
3.Liu Yichen#, Guo San-Dong#, Li Yongpan and Liu Cheng-Cheng*, Two-dimensional fully compensated ferrimagnetism, Physical Review Letters 134, 116703 (2025). (共一)
4.Guo San-Dong* and Ang Yee Sin, Spontaneous spin splitting in electric potential difference antiferromagnetism, Physical Review B 108, L180403 (2023). (以Letter形式发表)
5.Guo San-Dong*#, Liu Yichen#, Yu Junxi and Liu Cheng-Cheng*, Valley polarization in twisted altermagnetism, Physical Review B 110, L220402 (2024). (以Letter形式发表)
6.Guo San-Dong*, Li Ping and Wang Guangzhao, First-principles calculations study of valley polarization in antiferromagnetic bilayer systems, Physical Review B 111, L140404 (2025). (以Letter形式发表)
7.Guo San-Dong*, Chen Shaobo and Wang Guangzhao, Spin ordering induced fully compensated ferrimagnetism achieved in bilayers of Cr2C2S6, Physical Review B 112, 134430 (2025).
8.Guo San-Dong*, Luo Qiqi, Zhang Shi-Hao and Jiang Peng, External-field-induced transition from altermagnetic metal to fully-compensated ferrimagnetic metal in monolayer Cr2O, Physical Review B 113, 064408 (2026).
9.Guo San-Dong*, Zhang Liguo, Guo Xiao-Shu and Zhu Gangqiang, Weak valley-layer coupling and valley polarization in a centrosymmetric 1T-FeCl2 monolayer, Physical Review B 112, 014453 (2025)。
10.Guo San-Dong*, Mu Wen-Qi, Wang Jia-Hao, Yang Yu-Xuan, Wang Bing and Ang Yee Sin, Strain effects on the topological and valley properties of the Janus monolayer VSiGeN4, Physical Review B 106, 064416 (2022).
11.Guo San-Dong*, Tao Yu-Ling, Guo Hao-Tian, Zhao Zhuo-Yan, Wang Bing, Wang Guangzhao and Wang Xiao-Tian, Possible electronic state quasi-half-valley metal in a VGe2P4 monolayer, Physical Review B 107, 054414 (2023).
12.Guo San-Dong*, Tao Yu-Ling, Zhuo Zi-Yang, Zhu Gangqiang and Ang Yee Sin, Electric-field-tuned anomalous valley Hall effect in A-type hexagonal antiferromagnetic monolayers, Physical Review B 109, 134402 (2024).
13.Guo San-Dong*, Zhu Jing-Xin, Yin Meng-Yuan and Liu Bang-Gui, Substantial electronic correlation effects on the electronic properties in a Janus FeClF monolayer, Physical Review B 105, 104416 (2022).
14.Guo San-Dong*, Zhu Jing-Xin, Mu Wen-Qi and Liu Bang-Gui, Possible way to achieve anomalous valley Hall effect by piezoelectric effect in a GdCl2 monolayer, Physical Review B 104, 224428 (2021).
15.Guo San-Dong*, Guo Xiao-Shu and Wang Guangzhao, Valley polarization in two dimensional tetragonal altermagnetism, Physical Review B 110, 184408 (2024).
16.Guo San-Dong*, Zhang Liguo, Zhang Yiwen, Li Ping and Wang Guangzhao, Large spontaneous valley polarization and anomalous valley Hall effect in antiferromagnetic monolayer Fe2CF2, Physical Review B 110, 024416 (2024).
17.Guo San-Dong*#, Xu Wei#, Xue Yang, Zhu Gangqiang and Ang Yee Sin*, Layer-locked anomalous valley Hall effect in a two-dimensional A-type tetragonal antiferromagnetic insulator, Physical Review B 109, 134426 (2024).
18.Guo San-Dong*#, Feng Xu-Kun#, Huang Dong, Chen Shaobo, Wang Guangzhao and Ang Yee Sin, Intrinsic persistent spin texture in two-dimensional T-XY (X, Y=P, As, Sb, Bi; X≠Y), Physical Review B 108, 075421 (2023).
19.Guo San-Dong*, Guo Xiao-Shu, Cheng Kai, Wang Ke and Ang Yee Sin, Piezoelectric altermagnetism and spin-valley polarization in Janus monolayer Cr2SO, Applied Physics Letters 123, 082401 (2023). (Editor’s Pick)
20.Guo San-Dong* and Wang Guangzhao, External-field-induced altermagnetism in experimentally synthesized monolayer CrX3 (X=Cl, Br, and I), Applied Physics Letters 127, 042402 (2025).
21.Guo San-Dong*, He Junjie and Ang Yee Sin, Achieving fully compensated ferrimagnetism through two-dimensional CrI3/CrGeTe3 heterojunctions, Applied Physics Letters 127, 232401 (2025).
电子邮箱
Email：sandongyuwang@163.com
